Photoluminescence of Frank-type defects on the basal plane in 4H–SiC epilayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3499431
Reference10 articles.
1. Formation of basal plane Frank-type faults in 4H-SiC epitaxial growth
2. Formation of extended defects in 4H-SiC epitaxial growth and development of a fast growth technique
3. Epitaxial growth of thick 4H–SiC layers in a vertical radiant-heating reactor
4. Annealing effects on single Shockley faults in 4H-SiC
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