Author:
Kamata Isaho,Zhang Xuan,Tsuchida Hidekazu
Subject
Physics and Astronomy (miscellaneous)
Cited by
63 articles.
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1. Characterization of partial dislocations for (3, 3, 4), (3, 3, 3, 3), and (3, 3, 2, 2, 4) stacking faults in 4H-SiC crystals;Journal of Crystal Growth;2023-12
2. Formation and propagation mechanism of complex stacking fault in 180 μm thick 4H-SiC epitaxial layers;Scripta Materialia;2023-10
3. Optoelectronic and structural characterization of trapezoidal defects in 4H-SiC epilayers and the effect on MOSFET reliability;Journal of Applied Physics;2023-08-18
4. Structural investigation of triangular defects in 4H-SiC epitaxial layers as nucleation source for bar shaped stacking faults (BSSFs);Journal of Physics D: Applied Physics;2023-05-10
5. Effects of surface roughness and single Shockley stacking fault expansion on the electroluminescence of 4H-SiC;Optics Continuum;2023-04-24