Author:
Fragkos Ioannis E.,Tan Chee-Keong,Dierolf Volkmar,Fujiwara Yasufumi,Tansu Nelson
Publisher
Springer Science and Business Media LLC
Reference75 articles.
1. Keller, S. et al. Gallium nitride based high power heterojunction field effect transistors: Process development and present status at UCSB. IEEE Transactions on Elect. Dev. 48, 3 (2001).
2. Oka, T. & Nozawa, N. AlGaN/GaN recessed MIS-gate HFET with high-threshold-voltage normally-off operation for power electronics applications. IEEE Elect. Dev. Lett. 29, 7 (2008).
3. Tong, H. et al. Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition. Appl. Phys. Lett. 97, 112105 (2010).
4. Yamaguchi, S., Izaki, R., Kaiwa, N., Sugimura, S. & Yamamoto, A. Thermoelectric devices using and thin films prepared by reactive radiofrequency Sputtering. Appl. Phys. Lett. 84, 5344 (2004).
5. Dahal, R., Pantha, B., Li, J., Lin, J. Y. & Jiang, H. X. InGaN/GaN multiple quantum well solar cells with long operating wavelengths. Appl. Phys. Lett. 94, 063505 (2009).
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