Thermoelectric devices using InN and Al1−xInxN thin films prepared by reactive radio-frequency sputtering
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1766400
Reference8 articles.
1. Thermoelectric Materials: New Approaches to an Old Problem
2. Fabrication of Oxide Thermoelectric Generator Element
3. Effect of Sb doping on the thermoelectric properties of Ti-based half-Heusler compounds, TiNiSn1−xSbx
4. Thermoelectric Properties of Electrically Conductive III-Oxynitrides of Al1-xInxOsNt and InOsNt Prepared by Radio-Frequency Reactive Sputtering: Toward a Thermopower Device
5. Thermoelectric properties of Al1−xInxN and Al1−y−zGayInzN prepared by radio-frequency sputtering: Toward a thermoelectric power device
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1. Reduction of thermal conductivity in GaN/InxAl1−xN/GaN Superlattice under the influence of interfacial electric field;Indian Journal of Physics;2023-04-13
2. Role of interfacial electric field in thermal conductivity of indium-rich GaN/InxGa1−xN/GaN superlattices (x ≥ 0.7);Indian Journal of Physics;2021-07-03
3. Interfacial electric field and cross-plane thermal conductivity of GaN/InxGa1-xN superlattices (x = 0.1 and 0.3);Applied Physics A;2021-03-16
4. A theoretical investigation of pyroelectric effect and thermoelectric improvement of AlInN/GaN heterostructures;Thin Solid Films;2019-08
5. Morphological diversity of AlN nano- and microstructures: synthesis, growth orientations and theoretical modelling;International Materials Reviews;2019-07-29
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