Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3489086
Reference41 articles.
1. 500 nm electrically driven InGaN based laser diodes
2. Optical gain characteristics of staggered InGaN quantum wells lasers
3. Origin of efficiency droop in GaN-based light-emitting diodes
4. Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2
5. Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes
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