InGaN Color Tunable Full Color Passive Matrix
Author:
Affiliation:
1. Innovation Semiconductor Inc., Rochester, NY, USA
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10053585/10018213.pdf?arnumber=10018213
Reference24 articles.
1. Quantum dot-integrated GaN light-emitting diodes with resolution beyond the retinal limit
2. Investigation of indium–tin-oxide ohmic contact to p-GaN and its application to high-brightness GaN-based light-emitting diodes
3. Progress of InGaN-Based Red Micro-Light Emitting Diodes
4. Effect of KOH passivation for top-down fabricated InGaN nanowire light emitting diodes
5. A Toxicologic Review of Quantum Dots: Toxicity Depends on Physicochemical and Environmental Factors
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