Effect of KOH passivation for top-down fabricated InGaN nanowire light emitting diodes
Author:
Affiliation:
1. Department of Microsystems Engineering, Rochester Institute of Technology, Rochester, New York 14623, USA
2. Department of Electrical and Microelectronic Engineering, Rochester Institute of Technology, Rochester, New York 14623, USA
Funder
National Science Foundation
Office of Naval Research
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5123171
Reference24 articles.
1. History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination
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4. Fabrication of normally-off GaN nanowire gate-all-around FET with top-down approach
5. Monolithic Integration of GaN Nanowire Light-Emitting Diode With Field Effect Transistor
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