Material Synthesis and Device Aspects of Monolayer Tungsten Diselenide
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-018-23501-4.pdf
Reference36 articles.
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2. Das, S. & Appenzeller, J. WSe2 field effect transistors with enhanced ambipolar characteristics. Appl Phys Lett 103 (2013).
3. Chuang, H. J. et al. Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors. Nano Letters 16, 1896–1902 (2016).
4. Podzorov, V., Gershenson, M. E., Kloc, C., Zeis, R. & Bucher, E. High-mobility field-effect transistors based on transition metal dichalcogenides. Appl Phys Lett 84, 3301–3303 (2004).
5. Pradhan, N. R. et al. Field-Effect Transistors Based on Few-Layered alpha-MoTe2. Acs Nano 8, 5911–5920 (2014).
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