High-mobility field-effect transistors based on transition metal dichalcogenides
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1723695
Reference19 articles.
1. On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration
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4. Paper-like electronic displays: Large-area rubber-stamped plastic sheets of electronics and microencapsulated electrophoretic inks
5. All-Inorganic Field Effect Transistors Fabricated by Printing
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