Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition-Reference-Cited by-同舟云学术

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

Published:2016-03-10 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Cheng Jianpeng,Yang Xuelin,Sang Ling,Guo Lei,Zhang Jie,Wang Jiaming,He Chenguang,Zhang Lisheng,Wang Maojun,Xu Fujun,Tang Ning,Qin Zhixin,Wang Xinqiang,Shen Bo

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep23020.pdf

Reference24 articles.

1. Semond, F. Epitaxial challenges of GaN on silicon. MRS Bulletin 40, 412 (2015).

2. Zhu, D., Wallis, D. J. & Humphreys, C. J. Prospects of III-nitride optoelectronics grown on Si. Rep. Prog. Phys 76, 106501 (2013).

3. Dadgar, A. Sixteen years GaN on Si. Phys. Stat. Sol. B 252, 1063 (2015).

4. Ishida, M., Ueda, T., Tanaka, T. & Ueda, D. GaN on Si technologies for power switching devices. Electron. Devices 60, 3053 (2013).

5. Arulkumaran, S., Egawa, T. & Ishikawa, H. Studies of AlGaN/GaN high-electron-mobility transistors on 4-in. diameter Si and sapphire substrates. Solid-State Electron 49, 1632 (2005).

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