Large Area Stress Distribution in Crystalline Materials Calculated from Lattice Deformation Identified by Electron Backscatter Diffraction
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep05934.pdf
Reference21 articles.
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2. Wagner, J. M. & Bechstedt, F. Properties of strained wurtzite GaN and AlN: Ab initio studies. Phys. Rev. B 66, 115202 (2002).
3. Darakchieva, V. et al. Lattice parameters of GaN layers grown on a-plane sapphire: Effect of in-plane strain anisotropy. Appl. Phys. Lett. 82, 703 (2003).
4. Pan, Z. et al. X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1 − x/GaAs (001) sandwiched structures. J. Cryst. Growth 217, 26–32 (2000).
5. Rogan, R. C., Tamura, N., Swift, G. A. & Üstündag, E. Direct measurement of triaxial strain fields around ferroelectric domains using X-ray microdiffraction. Nat. Mater. 2, 379–381 (2003).
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