Effect of Temperature Gradient on AlN Crystal Growth by Physical Vapor Transport Method
Author:
Affiliation:
1. State Key Lab of Crystal Materials, Shandong University, Jinan 250100, P. R. China
2. Energy Research Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, P. R. China
Funder
Shandong Province
Shandong University
National Natural Science Foundation of China
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.9b01085
Reference37 articles.
1. GaN, AlN, and InN: A review
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5. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
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