Memory window engineering of Ta2O5−x oxide-based resistive switches via incorporation of various insulating frames
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep30333.pdf
Reference31 articles.
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3. Lee, M. J. et al. Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory. Adv. Mater. 19, 3919–3923, doi: 10.1002/adma.200700251 (2007).
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