Structurally Engineered Stackable and Scalable 3D Titanium-Oxide Switching Devices for High-Density Nanoscale Memory-Reference-Cited by-同舟云学术

Structurally Engineered Stackable and Scalable 3D Titanium-Oxide Switching Devices for High-Density Nanoscale Memory

Published:2014-11-06 Issue:1 Volume:27 Page:59-64
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Lee Daeseok¹,Park Jaesung¹,Park Jaehyuk¹,Woo Jiyong¹,Cha Euijun¹,Lee Sangheon¹,Moon Kibong¹,Song Jeonghwan¹,Koo Yunmo¹,Hwang Hyunsang¹

Affiliation:

1. Department of Materials Science and Engineering; Pohang University of Science and Technology (POSTECH); 77 Cheongam-ro Nam-gu Pohang 790-784 Republic of Korea

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference26 articles.

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4. Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers

5. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

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