Performance Enhancement of SnS/<i>h</i>-BN Heterostructure p-Type FET via the Thermodynamically Predicted Surface Oxide Conversion Method-Reference-Cited by-同舟云学术

Performance Enhancement of SnS/h-BN Heterostructure p-Type FET via the Thermodynamically Predicted Surface Oxide Conversion Method

Author:

Chang Yih-Ren¹,Nishimura Tomonori¹,Taniguchi Takashi²^ORCID,Watanabe Kenji³^ORCID,Nagashio Kosuke¹^ORCID

Affiliation:

1. Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

2. International Center for Materials Nanoarchitectonics, National Institute of Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

3. Research Center for Functional Materials, National Institute of Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

Funder

Core Research for Evolutional Science and Technology

Japan Society for the Promotion of Science

Mitsubishi Foundation

Yazaki Memorial Foundation for Science and Technology

NEXCO Group Companies

Canon Foundation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

Reference52 articles.

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