Mexican-hat dispersions and high carrier mobility of γ-SnX (X = O, S, Se, Te) single-layers: a first-principles investigation-Reference-Cited by-同舟云学术

Mexican-hat dispersions and high carrier mobility of γ-SnX (X = O, S, Se, Te) single-layers: a first-principles investigation

Published:2022 Issue:47 Volume:24 Page:29064-29073
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Tuan Vu V.¹²^ORCID,Lavrentyev A. A.³,Khyzhun O. Y.⁴,Binh Nguyen T. T.⁵,Hieu Nguyen V.⁶,Kartamyshev A. I.¹²,Hieu Nguyen N.⁷⁸^ORCID

Affiliation:

1. Laboratory for Computational Physics, Institute for Computational Science and Artificial Intelligence, Van Lang University, Ho Chi Minh City, Vietnam

2. Faculty of Mechanical – Electrical and Computer Engineering, Van Lang University, Ho Chi Minh City, Vietnam

3. Department of Electrical Engineering and Electronics, Don State Technical University, 1 Gagarin Square, 344010 Rostov-on-Don, Russian Federation

4. Frantsevych Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 3 Krzhyzhanovsky Street, UA-03142 Kyiv, Ukraine

5. Faculty of Basic Sciences, Quang Binh University, Quang Binh 510000, Vietnam

6. Department of Physics, The University of Da Nang, University of Science and Education, Da Nang 550000, Vietnam

7. Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam

8. Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam

Abstract

The shape of energy dispersions near the band-edges plays a decisive role in the transport properties, especially the carrier mobility, of semiconductors.

Funder

Bọ Giao dục và Đào tạo

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CP/D2CP04265G

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