p-Type Conversion of WS<sub>2</sub> and WSe<sub>2</sub> by Position-Selective Oxidation Doping and Its Application in Top Gate Transistors-Reference-Cited by-同舟云学术

p-Type Conversion of WS₂ and WSe₂ by Position-Selective Oxidation Doping and Its Application in Top Gate Transistors

Published:2023-05-24 Issue:22 Volume:15 Page:26977-26984
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kato Ryoichi¹,Uchiyama Haruki¹²,Nishimura Tomonori¹^ORCID,Ueno Keiji³,Taniguchi Takashi⁴^ORCID,Watanabe Kenji⁵^ORCID,Chen Edward⁶,Nagashio Kosuke¹^ORCID

Affiliation:

1. Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan

2. Department of Electronics, Nagoya University, Nagoya 464-8603, Japan

3. Department of Chemistry, Saitama University, Saitama 338-8570, Japan

4. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Ibaraki 305-0044, Japan

5. Research Center for Functional Materials, National Institute for Materials Science, Ibaraki 305-0044, Japan

6. Taiwan Semiconductor Manufacturing Company (TSMC), Ltd., Hsinchu 300-75, Taiwan

Funder

Japan Society for the Promotion of Science

Japan Science and Technology Agency

National Institute of Information and Communications Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c04052

Reference67 articles.

1. Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices

2. MoS 2 transistors with 1-nanometer gate lengths

3. Quantum engineering of transistors based on 2D materials heterostructures

4. A Monolayer MoS₂ FET with an EOT of 1.1 nm Achieved by the Direct Formation of a High‐κ Er₂O₃ Insulator Through Thermal Evaporation

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