Work Function Modulation of Bi/Au Bilayer System toward p-Type WSe2 FET
Author:
Affiliation:
1. Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan
2. Department of Chemistry, Saitama University, Saitama 338-8570, Japan
Funder
JST-Mirai Program
Japan Society for the Promotion of Science
National Institute of Information and Communications Technology
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01091
Reference31 articles.
1. Science of 2.5 dimensional materials: paradigm shift of materials science toward future social innovation
2. Graphene and two-dimensional materials for silicon technology
3. MoS 2 transistors with 1-nanometer gate lengths
4. A Monolayer MoS2 FET with an EOT of 1.1 nm Achieved by the Direct Formation of a High‐κ Er2O3 Insulator Through Thermal Evaporation
5. Two-Dimensional High-Quality Monolayered Triangular WS2 Flakes for Field-Effect Transistors
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