Junctionless Electric-Double-Layer MoS<sub>2</sub> Field-Effect Transistor with a Sub-5 nm Thick Electrostatically Highly Doped Channel-Reference-Cited by-同舟云学术

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Junctionless Electric-Double-Layer MoS₂ Field-Effect Transistor with a Sub-5 nm Thick Electrostatically Highly Doped Channel

Published:2023-02-06 Issue:6 Volume:15 Page:8298-8304
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Jeon Dae-Young¹²^ORCID,Park Jimin¹,Park So Jeong³^ORCID,Kim Gyu-Tae³^ORCID

Affiliation:

1. Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Joellabuk-do55324, South Korea

2. Department of Electrical Engineering, Gyeongsang National University, Jinju52828, Gyeongnam, South Korea

3. School of Electrical Engineering, Korea University, Seoul136-701, South Korea

Funder

National Research Foundation of Korea

Korea Institute of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c19596

Reference43 articles.

1. The era of hyper-scaling in electronics

2. Metrology for the next generation of semiconductor devices

3. Nanowire & nanosheet FETs for ultra-scaled, high-density logic and memory applications

4. Junctionless versus inversion-mode lateral semiconductor nanowire transistors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Unveiling the potential of vanadium-doped CVD-grown p-type MoS2 in vertical homojunction UV–Vis photodiodes;Materials Today Physics;2024-04

2. Negative Differential Interlayer Resistance in WSe₂ Multilayers via Conducting Channel Migration with Vertical Double-Side Contacts;ACS Applied Materials & Interfaces;2023-12-05

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