Negative Differential Interlayer Resistance in WSe<sub>2</sub> Multilayers via Conducting Channel Migration with Vertical Double-Side Contacts-Reference-Cited by-同舟云学术

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Negative Differential Interlayer Resistance in WSe₂ Multilayers via Conducting Channel Migration with Vertical Double-Side Contacts

Published:2023-12-05 Issue:50 Volume:15 Page:58605-58612
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Han Yeongseo¹,Chae Minji¹,Choi Dahyun¹,Song Inseon¹,Ko Changhyun¹²,Cresti Alessandro³,Theodorou Christoforos³,Joo Min-Kyu¹²^ORCID

Affiliation:

1. Department of Applied Physics, Sookmyung Women’s University, Seoul 04310, Republic of Korea

2. Institute of Advanced Materials and Systems, Sookmyung Women’s University, Seoul 04310, Republic of Korea

3. Univ. Grenoble Alpes, Univ. Savoie Mont Blanc, CNRS, Grenoble INP, IMEP-LAHC, Grenoble 38000, France

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c13699

Reference47 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Two-dimensional atomic crystals

3. Two-dimensional gas of massless Dirac fermions in graphene

4. Interlayer valley excitons in heterobilayers of transition metal dichalcogenides

5. Highly crystalline 2D superconductors

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strong contact resistance effects on vertical carrier density profile and surface trap density in WSe2 multilayers;Applied Physics Letters;2024-02-26

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