High-Frequency Graphene Base Hot-Electron Transistor-Reference-Cited by-同舟云学术

High-Frequency Graphene Base Hot-Electron Transistor

Published:2021-03-18 Issue:4 Volume:15 Page:6756-6764
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Liang Bor-Wei¹,Chang Wen-Hao²,Lin Hung-Yu¹,Chen Po-Chun³^ORCID,Zhang Yi-Tang¹,Simbulan Kristan Bryan³^ORCID,Li Kai-Shin⁴,Chen Jyun-Hong⁴,Kuan Chieh-Hsiung¹,Lan Yann-Wen³^ORCID

Affiliation:

1. Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan

2. Department of Physics, National Taiwan University, Taipei 10617, Taiwan

3. Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan

4. Taiwan Semiconductor Research Institute, National Applied Research Laboratories, Hsinchu 30078, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Taiwan Semiconductor Research Institute

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.0c10208

Reference50 articles.

1. MoS 2 transistors with 1-nanometer gate lengths

2. GaN transistors on Si for switching and high-frequency applications

3. Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors

4. GaAsGaAlAs heterojunction transistor for high frequency operation

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