Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors-Reference-Cited by-同舟云学术

Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors

Published:2017-11-13 Issue:10 Volume:215 Page:1700653
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Giannazzo Filippo¹^ORCID,Fisichella Gabriele¹,Greco Giuseppe¹,Schilirò Emanuela¹,Deretzis Ioannis¹,Lo Nigro Raffaella¹,La Magna Antonino¹,Roccaforte Fabrizio¹,Iucolano Ferdinando²,Lo Verso Stella²,Ravesi Sebastiano²,Prystawko Pawel³,Kruszewski Piotr³,Leszczyński Mike³,Dagher Roy⁴,Frayssinet Eric⁴,Michon Adrien⁴,Cordier Yvon⁴

Affiliation:

1. Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e Microsistemi (CNR-IMM); Strada VIII, n. 5 Zona Industriale 95121 Catania Italy

2. STMicroelectronics; Stradale Primosole 50 95121 Catania Italy

3. TopGaN; Prymasa TysiÄclecia 98 01-424 Warsaw Poland

4. Université Côte d'Azur, CNRS, CRHEA, Rue Bernard Gregory; 06560 Valbonne France

Funder

Ministero dell’Istruzione, dell’Università e della Ricerca

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference46 articles.

1. Wide Energy Bandgap Electronic Devices

2. GaN, AlN, and InN: A review

3. AlGaN/GaN HEMTs-an overview of device operation and applications

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