MoTe2 Lateral Homojunction Field-Effect Transistors Fabricated using Flux-Controlled Phase Engineering-Reference-Cited by-同舟云学术

MoTe2 Lateral Homojunction Field-Effect Transistors Fabricated using Flux-Controlled Phase Engineering

Published:2019-06-27 Issue:7 Volume:13 Page:8035-8046
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Ma Rui¹,Zhang Huairuo²³^ORCID,Yoo Youngdong⁴,Degregorio Zachary Patrick⁵,Jin Lun⁵,Golani Prafful¹,Ghasemi Azadani Javad¹,Low Tony¹^ORCID,Johns James E.⁵^ORCID,Bendersky Leonid A.³,Davydov Albert V.³,Koester Steven J.¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, United States

2. Theiss Research, Inc., La Jolla, California 92037, United States

3. Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, United States

4. Department of Chemistry, Ajou University, Suwon 16499, Korea

5. Department of Chemistry, University of Minnesota, Minneapolis, Minnesota 55455, United States

Funder

National Institute of Standards and Technology

Division of Electrical, Communications and Cyber Systems

Defense Threat Reduction Agency

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.9b02785

Reference57 articles.

1. Integrated Circuits Based on Bilayer MoS2 Transistors

2. Large-scale 2D electronics based on single-layer MoS2 grown by chemical vapor deposition

3. Symmetric complementary logic inverter using integrated black phosphorus and MoS 2 transistors

4. Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors

5. Dynamic Memory Cells Using MoS2 Field-Effect Transistors Demonstrating Femtoampere Leakage Currents

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