Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors-Reference-Cited by-同舟云学术

Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors

Published:2015-05-07 Issue:1 Volume:6 Page:
ISSN:2041-1723
Container-title:Nature Communications
language:en
Short-container-title:Nat Commun

Author:

Liu Erfu,Fu Yajun,Wang Yaojia,Feng Yanqing,Liu Huimei,Wan Xiangang,Zhou Wei,Wang Baigeng,Shao Lubin,Ho Ching-Hwa,Huang Ying-Sheng^ORCID,Cao Zhengyi,Wang Laiguo,Li Aidong,Zeng Junwen,Song Fengqi,Wang Xinran,Shi Yi,Yuan Hongtao,Hwang Harold Y.,Cui Yi,Miao Feng^ORCID,Xing Dingyu

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry

Link

http://www.nature.com/articles/ncomms7991.pdf

Reference36 articles.

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2. Nair, R. R. et al. Fluorographene: a two-dimensional counterpart of teflon. Small 6, 2877–2884 (2010).

3. Mak, K. F. et al. Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).

4. Wang, Q. H. et al. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699–712 (2012).

5. Li, L. et al. Black phosphorus field-effect transistors. Nat. Nanotechnol. 9, 372–377 (2014).

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