Symmetric complementary logic inverter using integrated black phosphorus and MoS 2 transistors-Reference-Cited by-同舟云学术

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Symmetric complementary logic inverter using integrated black phosphorus and MoS 2 transistors

Published:2016-02-01 Issue:1 Volume:3 Page:011006
ISSN:2053-1583
Container-title:2D Materials
language:
Short-container-title:2D Mater.

Author:

Su Yang,Kshirsagar Chaitanya U,Robbins Matthew C,Haratipour Nazila,Koester Steven J

Funder

Defense Threat Reduction Agency

Division of Electrical, Communications and Cyber Systems

Division of Materials Research

Publisher

IOP Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://iopscience.iop.org/article/10.1088/2053-1583/3/1/011006/pdf

Reference31 articles.

1. Two-dimensional gas of massless Dirac fermions in graphene

2. The electronic properties of graphene

3. Stable, Single-Layer MX2 Transition-Metal Oxides and Dichalcogenides in a Honeycomb-Like Structure

4. High-speed graphene transistors with a self-aligned nanowire gate

5. High-frequency, scaled graphene transistors on diamond-like carbon

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3. Two-dimensional material-based complementary ambipolar field-effect transistors with ohmic-like contacts;Nanotechnology;2023-05-25

4. Complementary Transistors Based on Aligned Semiconducting Carbon Nanotube Arrays;ACS Nano;2022-11-23

5. Complementary Two-Dimensional (2-D) FET Technology With MoS2/hBN/Graphene Stack;IEEE Electron Device Letters;2021-12

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