Lowering the Schottky Barrier Height by Quasi-van der Waals Contacts for High-Performance p-Type MoTe<sub>2</sub> Field-Effect Transistors-Reference-Cited by-同舟云学术

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Lowering the Schottky Barrier Height by Quasi-van der Waals Contacts for High-Performance p-Type MoTe₂ Field-Effect Transistors

Published:2024-04-27 Issue: Volume: Page:
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Yang Ze¹,Peng Xingkun¹,Wang Jinyong²,Lin Jialong¹,Zhang Chuanlun¹,Tang Baoshan²,Zhang Jie¹^ORCID,Yang Weifeng¹^ORCID

Affiliation:

1. Department of Microelectronics and Integrated Circuit, School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen 361005, China

2. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore

Funder

National Natural Science Foundation of China

Xiamen Double-Hundred-Talent Program

Fujian Minjiang Distinguished Scholar Program

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.4c02106

Reference38 articles.

1. All‐van‐der‐Waals Barrier‐Free Contacts for High‐Mobility Transistors

2. Fabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes

3. Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

4. Promises and prospects of two-dimensional transistors

5. ZrTe₂ Compound Dirac Semimetal Contacts for High-Performance MoS₂ Transistors

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