Titanium Carbide MXene Nucleation Layer for Epitaxial Growth of High-Quality GaN Nanowires on Amorphous Substrates-Reference-Cited by-同舟云学术

Titanium Carbide MXene Nucleation Layer for Epitaxial Growth of High-Quality GaN Nanowires on Amorphous Substrates

Published:2020-01-27 Issue:2 Volume:14 Page:2202-2211
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Prabaswara Aditya¹^ORCID,Kim Hyunho²^ORCID,Min Jung-Wook¹,Subedi Ram Chandra¹^ORCID,Anjum Dalaver H.³⁴,Davaasuren Bambar³,Moore Kalani⁵,Conroy Michele⁵,Mitra Somak²,Roqan Iman S.²^ORCID,Ng Tien Khee¹^ORCID,Alshareef Husam N.²^ORCID,Ooi Boon S.¹

Affiliation:

1. Computer, Electrical, and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia

2. Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia

3. Core Laboratories, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia

4. Department of Physics, Khalifa University, PO Box 127788, Abu Dhabi, United Arab Emirates

5. Department of Physics, Bernal Institute, University of Limerick, Limerick, V94 T9PX, Ireland

Funder

King Abdullah University of Science and Technology

King Abdulaziz City for Science and Technology

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.9b09126

Reference52 articles.

1. Dislocation Filtering in GaN Nanostructures

2. III-nitride nanowires on unconventional substrates: From materials to optoelectronic device applications

3. Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

4. Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN

5. Large-Area van der Waals Epitaxial Growth of Vertical III-Nitride Nanodevice Structures on Layered Boron Nitride

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self-enhanced luminescence of copper nanowires combined with pH-sensitive glycosyl imprinted polymers: Electrochemiluminescence for high-sensitivity detection of sialic acid;Sensors and Actuators B: Chemical;2024-07

2. Current trends and future directions in Si-based MXene composites for enhanced lithium-ion battery applications: a comperehensive review;Composite Interfaces;2024-07

3. Characteristics of MAPbI₃ Stacked on the GaN Nanowires‐On‐Glass;Advanced Electronic Materials;2024-05-30

4. Ab-initio study of strain-tunable g-GaN/BN nanoheterostructure for optoelectronic and photocatalytic applications;Journal of Molecular Modeling;2024-04-10

5. Enhanced performance of solar-blind UV detectors based on Ti3C2Tx/AlGaN heterojunction;Ionics;2024-01-03