Large-Area van der Waals Epitaxial Growth of Vertical III-Nitride Nanodevice Structures on Layered Boron Nitride-Reference-Cited by-同舟云学术

Large-Area van der Waals Epitaxial Growth of Vertical III-Nitride Nanodevice Structures on Layered Boron Nitride

Published:2019-06-19 Issue:16 Volume:6 Page:1900207
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Sundaram Suresh¹²³^ORCID,Li Xin²,Halfaya Yacine²,Ayari Taha²³,Patriarche Gilles⁴,Bishop Christopher⁵,Alam Saiful²,Gautier Simon⁵,Voss Paul L.¹²,Salvestrini Jean Paul¹²³,Ougazzaden Abdallah¹²

Affiliation:

1. Georgia Institute of Technology; School of Electrical and Computer Engineering; GT-Lorraine 57070 Metz France

2. CNRS; UMI 2958; GT-CNRS; 2 Rue Marconi 57070 Metz France

3. GT Lorraine; 2 Rue Marconi 57070 Metz France

4. Centre de Nanosciences et de Nanotechnologies; Université Paris-Saclay; C2N - Site de Marcoussis; Route de Nozay F-91460 Marcoussis France

5. Institut Lafayette; 2 Rue Marconi 57070 Metz France

Funder

Agence Nationale de la Recherche

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/admi.201900207/fullpdf

Reference38 articles.

1. Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices

2. Nitride Semiconductor Nanorod Heterostructures for Full-Color and White-Light Applications

3. Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy

4. Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires

5. GaN nanowire light emitting diodes based on templated and scalable nanowire growth process

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