Plasmon–Phonon Coupling in Electrostatically Gated β-Ga2O3 Films with Mobility Exceeding 200 cm2 V–1 s

Plasmon–Phonon Coupling in Electrostatically Gated β-Ga₂O₃ Films with Mobility Exceeding 200 cm² V^–1 s^–1

Published:2022-04-18 Issue:6 Volume:16 Page:8812-8819
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Rajapitamahuni Anil Kumar¹,Manjeshwar Anusha Kamath¹,Kumar Avinash²,Datta Animesh²,Ranga Praneeth³,Thoutam Laxman Raju¹,Krishnamoorthy Sriram³⁴,Singisetti Uttam²,Jalan Bharat¹^ORCID

Affiliation:

1. Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States

2. Department of Electrical Engineering, University at Buffalo, Buffalo, New York 14260, United States

3. Department of Electrical and Computers Engineering, The University of Utah, Salt Lake City, Utah 84112, United States

4. Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106, United States

Funder

Air Force Office of Scientific Research

Division of Electrical, Communications and Cyber Systems

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.1c09535

Reference63 articles.

1. Guest Editorial: The dawn of gallium oxide microelectronics

2. Recent progress on the electronic structure, defect, and doping properties of Ga2O3

3. β-Ga2O3 for wide-bandgap electronics and optoelectronics

4. Recent progress in Ga2O3power devices

5. A review of Ga2O3materials, processing, and devices

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Room-temperature tuning of mid-infrared optical phonons and plasmons in W-doped VO2 thin films;Optical Materials;2024-08

2. Electrophoretic Deposition of Conformal β-Ga₂O₃ Films on Arbitrary Substrates for Heterojunction-Based Deep-Ultraviolet Photodetectors;ACS Applied Optical Materials;2024-07-25

3. β-Ga2O3 van der Waals p-n homojunction;Materials Today Physics;2024-05

4. Temperature dependence of the anisotropy of the infrared dielectric properties and phonon-plasmon coupling in n-doped 4H-SiC;Journal of Physics and Chemistry of Solids;2024-04

5. A 326 Nm Pure Ultraviolet Light Sources Achieved in a Ga2o3 Microwire Heterojunction Through Interface Optimization and Surface-Modification;2024