Asymmetric Ferroelectric-Gated Two-Dimensional Transistor Integrating Self-Rectifying Photoelectric Memory and Artificial Synapse-Reference-Cited by-同舟云学术

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Asymmetric Ferroelectric-Gated Two-Dimensional Transistor Integrating Self-Rectifying Photoelectric Memory and Artificial Synapse

Published:2022-06-22 Issue:7 Volume:16 Page:11218-11226
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Jiang Yurong¹^ORCID,Zhang Linlin¹,Wang Rui¹,Li Hongzhi¹,Li Lin¹,Zhang Suicai¹,Li Xueping¹,Su Jian¹,Song Xiaohui¹,Xia Congxin¹^ORCID

Affiliation:

1. School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China

Funder

Henan Province Science and Technology Innovation Talent Program

National Natural Science Foundation of China

Henan Innovative science and technology team

Henan Province Universities Scientific Research Key Project

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.2c04271

Reference44 articles.

1. Multifunctional MoTe ₂ Fe‐FET Enabled by Ferroelectric Polarization‐Assisted Charge Trapping

2. The future of ferroelectric field-effect transistor technology

3. Multifunctional Half-Floating-Gate Field-Effect Transistor Based on MoS₂–BN–Graphene van der Waals Heterostructures

4. High-performance, multifunctional devices based on asymmetric van der Waals heterostructures

5. Synergetic Behavior in 2D Layered Material/Complex Oxide Heterostructures

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