Multifunctional Half-Floating-Gate Field-Effect Transistor Based on MoS<sub>2</sub>–BN–Graphene van der Waals Heterostructures-Reference-Cited by-同舟云学术

Multifunctional Half-Floating-Gate Field-Effect Transistor Based on MoS₂–BN–Graphene van der Waals Heterostructures

Author:

Wu Hao¹,Cui Yinghao²,Xu Jinlong¹,Yan Zhong²^ORCID,Xie Zhenda¹,Hu Yonghong³,Zhu Shining¹

Affiliation:

1. National Laboratory of Solid-State Microstructure, Nanjing University, Nanjing 210093, People’s Republic of China

2. School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People’s Republic of China

3. School of Nuclear Technology and Chemistry & Biology, Hubei University of Science and Technology, Xianning 437100, People’s Republic of China

Funder

Hubei University of Science and Technology

Natural Science Foundation of Jiangsu Province

Research Foundation of Educational Commission of Hubei Province

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

Reference30 articles.

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