Infrared Light Rewritable Optoelectronic Memories in Graphene-P(VDF-TrFE) Ferroelectric Field-Effect Transistor-Reference-Cited by-同舟云学术

Infrared Light Rewritable Optoelectronic Memories in Graphene-P(VDF-TrFE) Ferroelectric Field-Effect Transistor

Published:2024-06-14 Issue:6 Volume:6 Page:4336-4344
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Chen Yinhui¹²,Jia Yuping¹^ORCID,Chen Yang¹,Shi Zhiming¹^ORCID,Lv Shunpeng¹,Jiang Ke¹^ORCID,Liu Mingrui¹,Wu Tong¹,Li Dabing¹^ORCID,Sun Xiaojuan¹^ORCID

Affiliation:

1. Key Laboratory of Luminescence Science and Technology, Chinese Academy of Sciences & State Key Laboratory of Luminescence Science and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People’s Republic of China

2. University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

the Key Research Program of Frontier Sciences, Chinese Academy of Sciences

CAS Project for Young Scientists in Basic Research

the Youth Growth Science and Technology Program of JilinProvince

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00418

Reference37 articles.

1. Mastering the game of Go without human knowledge

2. Optically Rewritable Memory in a Graphene–Ferroelectric-Photovoltaic Heterostructure

3. Multifunctional MoTe ₂ Fe‐FET Enabled by Ferroelectric Polarization‐Assisted Charge Trapping

4. The future of ferroelectric field-effect transistor technology

5. Multifunctional Half-Floating-Gate Field-Effect Transistor Based on MoS₂–BN–Graphene van der Waals Heterostructures

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1. Correction to “Infrared Light Rewritable Optoelectronic Memories in Graphene-P(VDF-TrFE) Ferroelectric Field-Effect Transistor”;ACS Applied Electronic Materials;2024-08-16