Correction to “Infrared Light Rewritable Optoelectronic Memories in Graphene-P(VDF-TrFE) Ferroelectric Field-Effect Transistor”-Reference-Cited by-同舟云学术

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Correction to “Infrared Light Rewritable Optoelectronic Memories in Graphene-P(VDF-TrFE) Ferroelectric Field-Effect Transistor”

Published:2024-08-16 Issue: Volume: Page:
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Chen Yinhui,Jia Yuping^ORCID,Chen Yang,Shi Zhiming^ORCID,Lv Shunpeng,Jiang Ke^ORCID,Liu Mingrui,Wu Tong,Li Dabing^ORCID,Sun Xiaojuan^ORCID

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

the Key Research Program of Frontier Sciences, Chinese Academy of Sciences

CAS Project for Young Scientists in Basic Research

the Youth Growth Science and Technology Program of JilinProvince

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c01365

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