High-performance, multifunctional devices based on asymmetric van der Waals heterostructures-Reference-Cited by-同舟云学术

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High-performance, multifunctional devices based on asymmetric van der Waals heterostructures

Published:2018-06 Issue:6 Volume:1 Page:356-361
ISSN:2520-1131
Container-title:Nature Electronics
language:en
Short-container-title:Nat Electron

Author:

Cheng Ruiqing,Wang Feng,Yin Lei,Wang Zhenxing,Wen Yao,Shifa Tofik Ahmed,He Jun

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://www.nature.com/articles/s41928-018-0086-0.pdf

Reference42 articles.

1. Novoselov, K. S. et al. Electric field effect in atomically thin carbon films. Science 306, 666–669 (2004).

2. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nat. Nanotech. 6, 147–150 (2011).

3. Desai, S. B. et al. MoS2 transistors with 1-nanometer gate lengths. Science 354, 99–102 (2016).

4. Xu, K. et al. Sub-10 nm nanopattern architecture for 2D material field-effect transistors. Nano Lett. 17, 1065–1070 (2017).

5. Lopez-Sanchez, O., Lembke, D., Kayci, M., Radenovic, A. & Kis, A. Ultrasensitive photodetectors based on monolayer MoS2. Nat. Nanotech. 8, 497–501 (2013).

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