High-Mobility GaSb Nanostructures Cointegrated with InAs on Si-Reference-Cited by-同舟云学术

High-Mobility GaSb Nanostructures Cointegrated with InAs on Si

Published:2017-02-27 Issue:3 Volume:11 Page:2554-2560
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Borg Mattias¹^ORCID,Schmid Heinz¹^ORCID,Gooth Johannes¹,Rossell Marta D.¹²,Cutaia Davide¹,Knoedler Moritz¹,Bologna Nicolas¹²,Wirths Stephan¹,Moselund Kirsten E.¹,Riel Heike¹

Affiliation:

1. IBM Research − Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland

2. Electron Microscopy Center, EMPA, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland

Funder

Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung

H2020 European Research Council

Seventh Framework Programme

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.6b04541

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3. Gate-all-around InGaAs nanowire FETS with peak transconductance of 2200μS/μm at 50nm Lg using a replacement Fin RMG flow

4. Yuan, Z.; Kumar, A.; Chen, C.Y.; Nainani, A.; Griffin, P.; Wang, A.; Wang, W.; Wong, M. H.; Droopad, R.; Contreras-Guerrero, R.; Kirsch, P.; Jammy, R.; Plummer, J.; Saraswat, K. C.Optimal Device Architecture and Hetero-Integration Scheme for III–V CMOS. InSymposium on VLSI Technology, Digest of Technical Papers, Kyoto, Japan, June 10–13, 2013;Japan Society of Applied Physics:Kyoto, Japan, 2013; ppT54–T55.

5. Hole mobility enhancement in In0.41Ga0.59Sb quantum-well field-effect transistors

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