Gate-all-around InGaAs nanowire FETS with peak transconductance of 2200μS/μm at 50nm Lg using a replacement Fin RMG flow-Reference-Cited by-同舟云学术

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Gate-all-around InGaAs nanowire FETS with peak transconductance of 2200μS/μm at 50nm Lg using a replacement Fin RMG flow

Published:2015-12 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE International Electron Devices Meeting (IEDM)
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Author:

Waldron N.,Sioncke S.,Franco J.,Nyns L.,Vais A.,Zhou X.,Lin H. C.,Boccardi G.,Maes J. W.,Xie Q.,Givens M.,Tang F.,Jiang X.,Chiu E.,Opdebeeck A.,Merckling C.,Sebaai F.,van Dorp D.,Teugels L.,Hernandez A. Sibaja,De Meyer K.,Barla K.,Collaert N.,Thean Y-V.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7402013/7409598/07409805.pdf?arnumber=7409805

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. From FinFET to Nanosheets and Beyond;Springer Handbook of Semiconductor Devices;2022-11-11

2. Study of scaling effect of ferroelectric gate stack in planar InGaAs MOSFET;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2022-08-19

3. Understanding the factors affecting contact resistance in nanowire field effect transistors (NWFETs) to improve nanoscale contacts for future scaling;Journal of Applied Physics;2022-07-14

4. State of the Art and Future Perspectives in Advanced CMOS Technology;Nanomaterials;2020-08-07

5. Synthesis and Applications of III–V Nanowires;Chemical Reviews;2019-08-06

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