CMOS-Compatible Replacement Metal Gate InGaAs-OI FinFET With $I_{ON}=156~\mu \text{A}/\mu \text{m}$ at $V_{DD}= 0.5$ V and $I_{OFF}=100$ nA/$\mu \text{m}$-Reference-Cited by-同舟云学术

CMOS-Compatible Replacement Metal Gate InGaAs-OI FinFET With $I_{ON}=156~\mu \text{A}/\mu \text{m}$ at $V_{DD}= 0.5$ V and $I_{OFF}=100$ nA/$\mu \text{m}$

Published:2016-02 Issue:2 Volume:37 Page:169-172
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Djara Vladimir,Deshpande Veeresh,Sousa Marilyne,Caimi Daniele,Czornomaz Lukas,Fompeyrine Jean

Funder

European Union Seventh Framework Programme through the COMPOSE3 Project and the IIIV MOS Project respectively

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7390344/7370755.pdf?arnumber=7370755

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