Formation of Nanoporous Features, Flat Surfaces, or Crystallographically Oriented Etched Profiles by the Si Chemical Dry Etching Using the Reaction of F2 + NO → F + FNO at an Elevated Temperature
Author:
Affiliation:
1. Plasma Nanotechnology Research Center (PLANT), Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603, Japan
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/jp4084794
Reference47 articles.
1. Ion‐ and electron‐assisted gas‐surface chemistry—An important effect in plasma etching
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3. Comparison of XeF2 and F‐atom reactions with Si and SiO2
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5. Development of Si(100) surface roughness at the initial stage of etching in F2 and XeF2 gases: ellipsometric study
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