Abstract
A silicon oxyfluoride layer was deposited on a-Si samples using SiF4/O2 plasma at different temperatures between −100°C and −40 °C. In situ X-ray photoelectron spectroscopy measurements were then performed to characterize the deposited layer. The sample was then brought back to room temperature and analyzed again. It has been shown that a temperature below −65 °C is needed to significantly enhance the physisorption of SiFx species. Hence, in this condition, a F-rich oxyfluoride layer, stable at low temperature only, is physisorbed. Above this threshold temperature, the native silicon oxide layer is fluorinated and the proportion of O in the deposited layer is higher and remains stable even when the sample is brought back to room temperature.
Funder
Agence Nationale de la Recherche
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Cited by
2 articles.
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