Creation of SiOF films with SiF4/O2 plasmas: From gas-surface interactions to film formation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1760835
Reference73 articles.
1. Low Dielectric Constant Interlayer Using Fluorine-Doped Silicon Oxide
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3. Plasma Enhanced Chemical Vapor Deposition and Characterization of Fluorine Doped Silicon Dioxide Films
4. Formation and characterization of the fluorocarbonated-SiO2 films by O2/FTES-helicon plasma chemical vapor deposition
5. Characteristics of SiOF Films Formed Using Tetraethylorthosilicate and Fluorotriethoxysilane at Room Temperature by Chemical Vapor Deposition
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