Development of Si(100) surface roughness at the initial stage of etching in F2 and XeF2 gases: ellipsometric study
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference28 articles.
1. Kinetics of Reaction of Elemental Fluorine. III. Fluorination of Silicon and Boron1
2. Ion enhanced gas-surface reactions: A kinetic model for the etching mechanism
3. Gaseous products from the reaction of XeF2with silicon
4. Mass and energy distribution of particles sputter etched from Si in a XeF2environment
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1. Microfabrication of Concave Micromirror for Microbial Cell Trapping Using K?hler Illumination by XeF2 Vapor Etching;Sensors and Materials;2019-04-30
2. Evaluation of the Difference in the Rate Coefficients of F2 + NOx (x = 1 or 2) → F + FNOx by the Stereochemical Arrangement Using the Density Functional Theory;The Journal of Physical Chemistry A;2015-02-10
3. Surface roughening and rippling during plasma etching of silicon: Numerical investigations and a comparison with experiments;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-05
4. Formation of Nanoporous Features, Flat Surfaces, or Crystallographically Oriented Etched Profiles by the Si Chemical Dry Etching Using the Reaction of F2 + NO → F + FNO at an Elevated Temperature;The Journal of Physical Chemistry C;2013-09-27
5. XeF2-induced removal of SiO2 near Si surfaces at 300 K: An unexpected proximity effect.;Journal of Applied Physics;2010-12
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