Graphene-Based Etch Resist for Semiconductor Device Fabrication-Reference-Cited by-同舟云学术

Graphene-Based Etch Resist for Semiconductor Device Fabrication

Published:2020-04-27 Issue:5 Volume:3 Page:4635-4641
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Kim Sang Won¹,Seol Minsu¹,Cho Yeonchoo¹,Shin Keun Wook¹^ORCID,Lee Dongwook¹,Jeong Seong-Jun¹,Lee Hyangsook²,Chung Jae Gwan²,Kim Hyun-Mi³,Kim Ki-Bum³^ORCID,Park Seongjun¹,Shin Hyeon-Jin¹^ORCID

Affiliation:

1. Inorganic Material Lab, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics Co., Suwon 16678, Republic of Korea

2. Analytical Engineering Group, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics Co., Suwon 16678, Republic of Korea

3. Department of Materials Science and Engineering, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-742, Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.0c00658

Reference24 articles.

1. Hardmask technology for sub-100 nm lithographic imaging

2. Low Stress TiN as Metal Hard Mask for Advance Cu-Interconnect

3. Spin-on Metal Oxides and Their Applications for Next Generation Lithography

4. Dry etch selectivity of a-C:H hardmasks for sub-65 nm patterning applications

5. High aspect ratio contact hole etching using relatively transparent amorphous carbon hard mask deposited from propylene

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