Hardmask technology for sub-100 nm lithographic imaging-Reference-Cited by-同舟云学术

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Hardmask technology for sub-100 nm lithographic imaging

Published:2003-06-11 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Advances in Resist Technology and Processing XX
language:
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Author:

Babich Katherina,Mahorowala Arpan P.,Medeiros David R.,Pfeiffer Dirk,Petrillo Karen E.,Angelopoulos Marie,Grill Alfred,Patel Vishnubhai,Halle Scott,Brunner Timothy A.,Conti Richard,Allen Scott D.,Wise Richard

Publisher

SPIE

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bonding structure and dry etching characteristics in amorphous B–C–N films for hardmask applications;Carbon;2024-06

2. Boron-doped amorphous carbon deposited by DC sputtering for a hardmask: Microstructure and dry etching properties;Applied Surface Science;2023-11

3. Effect of N doping on the microstructure and dry etch properties of amorphous carbon deposited with a DC sputtering system;RSC Advances;2023

4. Graphene-Based Etch Resist for Semiconductor Device Fabrication;ACS Applied Nano Materials;2020-04-27

5. Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices;ECS Journal of Solid State Science and Technology;2019

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