Maximum Achievable N Content in Atom-by-Atom Growth of Amorphous Si–C–N
Author:
Affiliation:
1. Department of Physics and NTIS - European Centre of Excellence, University of West Bohemia, Univerzitni 8, 30614 Plzen, Czech Republic
Funder
Grantov? Agentura Cesk? Republiky
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.0c08300
Reference48 articles.
1. Silicon carbonitride thin films deposited by reactive high power impulse magnetron sputtering
2. Mechanical properties of a fully dense polymer derived ceramic made by a novel pressure casting process
3. Comparative investigation of Si-C-N Films prepared by plasma enhanced chemical vapour deposition and magnetron sputtering
4. Mechanical Properties and Microstructural Characterization of Amorphous SiC x N y Thin Films After Annealing Beyond 1100°C
5. Influence of nitrogen–argon gas mixtures on reactive magnetron sputtering of hard Si–C–N films
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1. Amorphous silicon carbonitride (a‐SiCN) thin film coatings by remote plasma chemical vapor deposition using organosilicon precursor: Effect of substrate temperature;Plasma Processes and Polymers;2022-12-27
2. Study on photoelectricity properties of SiCN thin films prepared by magnetron sputtering;Journal of Materials Research and Technology;2021-11
3. Maximum Achievable N Content in Atom-by-Atom Growth of Amorphous Si-B-C-N Materials;Materials;2021-10-01
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