Interfacial Reactions between Ga and Cu-10Ni Substrate at Low Temperature-Reference-Cited by-同舟云学术

Interfacial Reactions between Ga and Cu-10Ni Substrate at Low Temperature

Published:2020-04-09 Issue:18 Volume:12 Page:21045-21056
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Liu Shiqian¹^ORCID,Zeng Guang²^ORCID,Yang Wenhui³,McDonald Stuart¹,Gu Qinfen⁴^ORCID,Matsumura Syo⁵,Nogita Kazuhiro¹

Affiliation:

1. Nihon Superior Centre for the Manufacture of Electronic Materials (NS CMEM), School of Mechanical and Mining Engineering, The University of Queensland, Brisbane, Queensland 4072, Australia

2. School of Materials Science and Engineering, Central South University, Changsha 410083, China

3. Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, Motooka 744, Nishi-ku, Fukuoka 819-0395, Japan

4. Powder Diffraction Beamline, The Australian Synchrotron (ANSTO), Clayton, Victoria 3168, Australia

5. The Ultramicroscopy Research Center, Kyushu University, Motooka 744, Nishi-ku, Fukuoka 819-0395, Japan

Funder

Kyushu University

Department of Education and Training

University of Queensland

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c02032

Reference51 articles.

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3. Materials, processing and reliability of low temperature bonding in 3D chip stacking

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5. Eutectic Gallium-Indium (EGaIn): A Liquid Metal Alloy for the Formation of Stable Structures in Microchannels at Room Temperature

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