Nanoscale Channel Length MoS<sub>2</sub> Vertical Field-Effect Transistor Arrays with Side-Wall Source/Drain Electrodes-Reference-Cited by-同舟云学术

Nanoscale Channel Length MoS₂ Vertical Field-Effect Transistor Arrays with Side-Wall Source/Drain Electrodes

Published:2024-03-21 Issue:13 Volume:16 Page:16544-16552
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Jia Xionghui¹²,Cheng Zhixuan¹²,Song Yiwen¹³,Zhang Yi¹²,Ye Yu¹²⁴^ORCID,Li Minglai¹²,Cheng Xing¹,Xu Wanjin¹,Li Yanping¹,Dai Lun¹²⁴^ORCID

Affiliation:

1. State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China

2. Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

3. Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China

4. Peking University Yangtze Delta Institute of Optoelectronics, Beijing 100871, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Peking Nanofab

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.4c01980

Reference34 articles.

1. Approaching the quantum limit in two-dimensional semiconductor contacts

2. Two-dimensional semiconductors for transistors

3. Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe 2

4. Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire

5. Modularized batch production of 12-inch transition metal dichalcogenides by local element supply

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