Oxide-Confined Formation of Germanium Nanowire Heterostructures for High-Performance Transistors-Reference-Cited by-同舟云学术

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Oxide-Confined Formation of Germanium Nanowire Heterostructures for High-Performance Transistors

Published:2011-07-01 Issue:7 Volume:5 Page:6008-6015
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Tang Jianshi¹,Wang Chiu-Yen²,Xiu Faxian¹³,Lang Murong¹,Chu Li-Wei²,Tsai Cho-Jen²,Chueh Yu-Lun²,Chen Lih-Juann²,Wang Kang L.¹

Affiliation:

1. Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California 90095, United States

2. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, 30013, Republic of China

3. Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50014, United States.

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn2017777

Reference26 articles.

1. Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures

2. Silicon-Nanowire Transistors with Intruded Nickel-Silicide Contacts

3. In situ Control of Atomic-Scale Si Layer with Huge Strain in the Nanoheterostructure NiSi/Si/NiSi through Point Contact Reaction

4. In-situ TEM Observation of Repeating Events of Nucleation in Epitaxial Growth of Nano CoSi2 in Nanowires of Si

5. Single Crystalline PtSi Nanowires, PtSi/Si/PtSi Nanowire Heterostructures, and Nanodevices

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4. Dielectric Confined Nickel-Titanium Germano-Silicide Junctions to SiGe Nanochannels;2023 IEEE Nanotechnology Materials and Devices Conference (NMDC);2023-10-22

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