Synthesis of Orthorhombic Tin Dioxide Nanowires in Track Templates

Author:

Baimukhanov Zein1ORCID,Dauletbekova Alma1ORCID,Junisbekova Diana1,Kalytka Valeriy2ORCID,Akilbekov Abdirash1ORCID,Akylbekova Aiman1ORCID,Baubekova Guldar1,Aralbayeva Gulnara1ORCID,Bazarbek Assyl-Dastan3,Usseinov Abay1ORCID,Popov Anatoli I.4ORCID

Affiliation:

1. Department of Technical Physics, L.N. Gumilyov Eurasian National University, Satpayev Str. 2, Astana 010008, Kazakhstan

2. Faculty of Energy, Automation and Telecommunications, Abylkas Saginov Karaganda Technical University, Karaganda 100027, Kazakhstan

3. Department of Space Technique and Technology, L.N. Gumilyov Eurasian National University, Satpayev Str. 2, Astana 010008, Kazakhstan

4. Institute of Solid State Physics, University of Latvia, Kengaraga 8, LV-1063 Riga, Latvia

Abstract

Electrochemical deposition into a prepared SiO2/Si-p ion track template was used to make orthorhombic SnO2 vertical nanowires (NWs) for this study. As a result, a SnO2-NWs/SiO2/Si nanoheterostructure with an orthorhombic crystal structure of SnO2 nanowires was obtained. Photoluminescence excited by light with a wavelength of 240 nm has a low intensity, arising mainly due to defects such as oxygen vacancies and interstitial tin or tin with damaged bonds. The current–voltage characteristic measurement showed that the SnO2-NWs/SiO2/Si nanoheterostructure made this way has many p-n junctions.

Funder

Ministry of Science and Higher Education of the Republic of Kazakhstan

Publisher

MDPI AG

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