In situ Control of Atomic-Scale Si Layer with Huge Strain in the Nanoheterostructure NiSi/Si/NiSi through Point Contact Reaction-Reference-Cited by-同舟云学术

In situ Control of Atomic-Scale Si Layer with Huge Strain in the Nanoheterostructure NiSi/Si/NiSi through Point Contact Reaction

Published:2007-06-30 Issue:8 Volume:7 Page:2389-2394
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Lu Kuo-Chang¹,Wu Wen-Wei¹,Wu Han-Wei¹,Tanner Carey M.¹,Chang Jane P.¹,Chen Lih J.¹,Tu K. N.¹

Affiliation:

1. Department of Materials Science and Engineering, Department of Chemical and Biomolecular Engineering, University of California, Los Angeles, Los Angeles, California 90095-1595, and Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, Republic of China

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl071046u

Reference41 articles.

1. Nanowire-Based Nanoelectronic Devices in the Life Sciences

2. Evidence for deep-water production in the North Pacific Ocean during the early Cenozoic warm interval

3. Silicon-Nanowire Transistors with Intruded Nickel-Silicide Contacts

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