Silicon-Nanowire Transistors with Intruded Nickel-Silicide Contacts-Reference-Cited by-同舟云学术

Silicon-Nanowire Transistors with Intruded Nickel-Silicide Contacts

Published:2006-11-09 Issue:12 Volume:6 Page:2660-2666
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Weber Walter M.¹,Geelhaar Lutz¹,Graham Andrew P.¹,Unger Eugen¹,Duesberg Georg S.¹,Liebau Maik¹,Pamler Werner¹,Chèze Caroline¹,Riechert Henning¹,Lugli Paolo¹,Kreupl Franz¹

Affiliation:

1. Qimonda Dresden GmbH & Co., Technology Center, D-01099 Dresden, Germany, Qimonda AG, Technology Innovations, D-81730 Munich, Germany, and Technische Universität München, Institute for Nanoelectronics, D-80333 Munich, Germany

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl0613858

Reference36 articles.

1. Organic-functionalized molecular sieves as shape-selective catalysts

2. Ballistic carbon nanotube field-effect transistors

3. Sub-20 nm Short Channel Carbon Nanotube Transistors

4. High-Current Nanotube Transistors

5. How do carbon nanotubes fit into the semiconductor roadmap?

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