Overcoming Low Ge Ionization and Erosion Rate Variation for Quantitative Ultralow Energy Secondary Ion Mass Spectrometry Depth Profiles of Si1–xGex/Ge Quantum Well Structures
Author:
Affiliation:
1. Department of Physics, University of Warwick, Gibbet Hill Road, Coventry, CV4 7AL, U.K.
Publisher
American Chemical Society (ACS)
Subject
Analytical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/ac202929x
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1. An O2+ probe energy study for boron quantification in Si1−Ge (0 ≤x≤ 1) using secondary ion mass spectrometry;Applied Surface Science;2016-12
2. Si1-xGex/Si Interface Profiles Measured to Sub-Nanometer Precision Using uleSIMS Energy Sequencing;Journal of the American Society for Mass Spectrometry;2016-07-21
3. Ultra high hole mobilities in a pure strained Ge quantum well;Thin Solid Films;2014-04
4. New RP-CVD grown ultra-high performance selectively B-doped pure-Ge 20 nm QWs on (100)Si as basis material for post-Si CMOS technology;physica status solidi (c);2013-12-09
5. Ultra-high hole mobility exceeding one million in a strained germanium quantum well;Applied Physics Letters;2012-10-22
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